Spatially selective disordering of InGaAs/GaAs quantum wells using an AlAs native oxide and thermal annealing technique

摘要

An InGaAs/GaAs quantum well (QW) disordering technique using AlAs native oxide and thermal annealing is presented. Unlike dielectric cap disordering, the AlAs native oxide can be placed close to quantum wells allowing for a spatially selective disordering deep within multilayer structures. The QW energy shifts and spatial control of the disordering were studied with photoluminescence and cathodoluminescence. The QW energy shift of thermally disordered regions containing buried oxide layer is ～45 meV greater than that of regions not containing buried oxide layers. The disordering transition width is estimated to be ～1μm.#1997 American Institute of Physics. S0003-6951(97)03047-7