Cross‐sectional transmission electron microscopy of silicon‐silicide interfaces

摘要

The epitaxial interfaces of Si/Pd2Si, Si/NiSi2, and, to a lesser extent, Si/PtSi have been investigated by transmission electron microscopy using cross‐sectional specimens. Direct lattice imaging was used to image the Si/Pd2Si and the Si/NiSi2interfaces. The Si/Pd2Si interface was found to be rather smooth on a macroscopic scale but rough on a atomic scale, whereas the opposite is true for the Si/NiSi2interface. A twinning relationship between NiSi2and {111} Si has been observed. The Si/PtSi interface is very rough on a macroscopic scale. Interface dislocations are present in the Pd‐ and Ni‐silicide cases. No evidence for an amorphous interfacial layer has been obtained.