Thermally induced Si accumulation onto Pd2Si surfaces has been studied for the first time with synchrotron radiation photoemission. Evidence is given of the formation of strong bonds between Si and Pd in the transition region between Pd2Si and Si. The results are discussed in view of the Pd‐Si interfaces prepared by annealing in device technology.
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机译:首次用同步辐射光发射研究了 Pd2Si 表面的热诱导 Si 积累。有证据表明,在 Pd2Si 和 Si 之间的过渡区域,Si 和 Pd 之间形成了强键。本文结合器件技术中退火法制备的Pd‐Si界面,对结果进行了讨论。
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