Preparation of beta-Bi2O3/g-C3N4 nanosheet p-n junction for enhanced photocatalytic ability under visible light illumination

摘要

beta-Bi2O3/g-C3N4 nanosheet (NS) p-n junction of g-C3N4 NS-wrapped beta-Bi2O3 was fabricated via self-assembly process by electrostatic force. By the analyses of scanning electron microscopy images and Fourier transform infrared spectra, the g-C3N4 NS has been wrapped on the spherical beta-Bi2O3 particles. Constructing p-n junction with g-C3N4 NS can enhance the separation efficiency of photogenerated carriers and light absorption ability of beta-Bi2O3 particles obtained by the characterization of fluorescence spectra and diffuse reflectance spectra. The photocatalytic removal rate of RhB is largely enhanced by construction of beta-Bi2O3/g-C3N4 NS p-n junctions. The photocatalytic ability of beta-Bi2O3/gC(3)N(4) NS p-n junctions can be adjusted by tuning the loading amount of g-C3N4 NS. The enhanced photocatalytic performance is firstly attributed to the p-n junction effect of efficient separation of photogenerated charge carriers. Furthermore, the increased light absorbance of the composites also contributes to the enhanced photocatalytic ability.