cw laser assisted diffusion and activation of tin in GaAs from a SnO2/SiO2source

摘要

A new technique for doping GaAs with Sn from a spinhyphen;on SnO2/SiO2source is described. Sn is first introduced in the GaAs substrate by a slow thermal ramp. Subsequent diffusion and activation of Sn is accomplished with a cw scanning laser. Results for laser power below and above the melting power of the substrate are presented. Transmission electron microscopy and electron diffraction patterns indicate that a chemical reaction involving the formation of a tinhyphen;arsenide compound occurs during the diffusion process.