Electrical and structural properties of rapid thermally annealed boronhyphen;doped silicon films deposited by plasmahyphen;enhanced chemicalhyphen;vapor deposition

摘要

The structural, electrical, and piezoresistive properties ofinsituboronhyphen;doped thin silicon layers deposited by plasmahyphen;enhanced chemicalhyphen;vapor deposition at 320thinsp;deg;C on oxidized silicon substrates and subjected to a rapid thermal anneal (1100thinsp;deg;C for 20 s) have been investigated. Macroscopic electrical parameters derived from resistivity and Hallhyphen;effect measurements were compared to microscopic characteristics deduced from optical data to explain the lowhyphen;temperature coefficients of resistance measured on this polycrystalline material. Finally, the piezoresistivity gauge factors of these heavily doped layers are discussed in view of their internal stress state and of other structural characteristics.