Unannealed and annealed depth distributions of mercury implanted into silicon

摘要

We report unannealed and annealed depth distributions for Hg implanted into Si at energies of 300ndash;900 keV and fluences from 1014to 1016cmminus;2. Range parameters and Pearson IV moments are determined; projected range and range straggle are about 40percnt; greater than Lindhard, Scharff, and Schioslash;tt calculations. Significant redistribution of Hg atoms occurs with annealing, especially at 550thinsp;deg;C, and the nature of the redistribution varies with ion fluence, and appears to be related to amorphization and regrowth of the damaged layer.