Spectral density due to the fluctuation of the total number of carriers in a semiconductor

摘要

By applying stochastics and thermodynamics, a formulation for deriving the spectral density due to the fluctuation of the total number of carriers in a semiconductor is suggested. From establishing and solving the master equations concerning the involved conditional probability functions, the autocorrelation and the cross correlation of the occupancy fluctuations can be obtained. The derived form of the spectral density due to the fluctuation of the total number of carriers is proportional to the equilibrium total number of carriers in the semiconductor, and becomes 1/fnoise spectrum when the power index of the relaxation times is large.