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Ultrafast carrier dynamics and intervalley scattering in ZnSe

机译:Ultrafast carrier dynamics and intervalley scattering in ZnSe

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摘要

Intraband carrier dynamics were measured in ZnSe films by a two-wavelength pump probe technique with 180 fs resolution. A below-band pump pulse was used to heat carrier distributions in N-type samples by free carrier absorption. The electron cooling time constant was observed to be 500 fs. Intervalley scattering was seen to play a significant role in the electron dynamics and the scattering time from the L back to the F valley was measured to be 1.8 ps. By examining the ratio of the intervalley component to the total response as a function of pump photon energy, the bottom of the L valley was determined to lie 1.30 eV above the F-valley minimum. # 1997 American Institute of Physics. S0003-6951 (97)01935-9

著录项

  • 来源
    《Applied physics letters》 |1997年第24期|3144-3146|共3页
  • 作者单位

    Research Laboratory of Electronics, Massachussets Institute of Technology,/ Cambridge, Massachussetts 02139;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 英语
  • 中图分类 应用物理学;
  • 关键词

  • 入库时间 2024-01-25 20:33:53
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