The c_(0) lattice parameter, band gap, and photoluminescence spectra of n-type 0.9 μm thick In_(x)Ga_(1-x)N films with x=0, 0.045, 0.085, and 0.140 were examined. The c_(0) lattice parameter followed Vegard's law using c_(0)=0.5185 nm for GaN and c_(0)=0.569 nm for InN. Band gap measurements by photocurrent spectroscopy fit well with data published by one other research group, with the combined set being described by the equation E_(g)=3.41-7.31x+14.99x~(2) for 0≤x≤0.15. Photoluminescence measurements with a pulsed nitrogen laser showed a peak well below the measured band gap, as well as significant luminescence above the measured band gap. The above-gap luminescence appears to be due to band filling by the high intensity laser pulses.
展开▼
