Growth and characterization of silicon molecular beam epilayers on GaPthinsp;(111) substrates

摘要

Silicon molecular beam epitaxy on thermally cleaned GaP(111) substrates has been prepared at 450thinsp;deg;C with the growth rate of 0.2 Aring;/s. The P segregation on the surface of Si epilayer beyond the thickness of 1500 Aring; has been observed. The surface of epilayer has the same (1times;1) periodicity as that of the substrate when the thickness of the epilayer is less than 500 Aring;. Above 500 Aring;, the surface shows a (3times;3) reconstruction. It is suggested that both (1times;1) and (3times;3) geometries are Phyphen;stabilized surface structures.