In situprocess evaluation during hydrogen plasma etching ofahyphen;Si:H films by microwave detected transient photoconductivity measurements

摘要

During removal of amorphous silicon films deposited on crystalline silicon substrates by dry etching in a hydrogen plasma the kinetics of mobile excess charge carriers have been followed by measuring the change of the microwave reflection after laser pulse illumination. Following the amplitude of the measured transient signals the thickness of the remaining amorphous silicon film can be determined and the decay in the nanosecond time range yields information about the defect density of the substrate surface. The impact of the plasma process on the surface recombination is shown and a criterion for endpoint detection is given in the case ofahyphen;Si:H removal from crystalline silicon covered with a SiO2layer.