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首页> 外文期刊>電子情報通信学会技術研究報告. シリコン材料·デバイス. Silicon Devices and Materials >RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage
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RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage

机译:RF MEMS Switch using the Pull-up Structure for High Long-term Reliability and Low Actuation Voltage

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摘要

In this paper, we developed the RF MEMS switch using the pull-up structure for high long-term reliability and low actuation voltage. To achieve the high long-term reliability and low actuation voltage, the RF MEMS switch adopted the pull-up structure using the movable contact pad, instead of cantilevers or fixed-fixed beams, because the movable contact pad was not deformed by electrostatic force. Reliable operations were demonstrated at a very low actuation voltage of 4.5 V. After 23 billion cyclic actuations, the reliable actuation voltages smaller than 5 V are obtained, while insertion loss and isolation are maintained below 0.51 and 55.0 dB, respectively, at 50 GHz.
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