Minorityhyphen;carrier extraction and accumulation near metalhyphen;semiconductor interfaces

摘要

Solution to the transport equations in the realm of rsquo;rsquo;small signal theoryrsquo;rsquo; results in expressions for the electric field, and the excess minorityhyphen;and majorityhyphen;carrier densities as functions of distance from an injecting boundary. Two situations are examined for rsquo;rsquo;lifetimersquo;rsquo; semiconductors, the rsquo;rsquo;traphyphen;freersquo;rsquo; case and the case with monoenergetic traps. With different boundary conditions, the new expressions apply equally to all four nonequilibrium processes: injection, exclusion, accumulation, and extraction. Results on extraction are supported by measurements on singlehyphen;crystal Ge, before and after neutron bombardment (to introduce traps).