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>Improved forwardhyphen;voltagep/njunction spacehyphen;charge region capacitance based on timehyphen;domain reasoning
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Improved forwardhyphen;voltagep/njunction spacehyphen;charge region capacitance based on timehyphen;domain reasoning
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机译:Improved forwardhyphen;voltagep/njunction spacehyphen;charge region capacitance based on timehyphen;domain reasoning
The timehyphen;domain reasoning employed in deriving a previousp/njunction spacehyphen;charge region capacitance model is elaborated for semiconductorp/njunctions under forward voltage. The previous model is improved by defining the applicable voltage range and by discussing highhyphen;injection effects. Results obtained from this model agree well with experimental and numerical results obtained previously. This treatment also provides the dependence of the spacehyphen;charge region thickness at large forward voltage.
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