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Transverse structures in resonatorless absorptive switching in bulk ZnSe

机译:体ZnSe无谐振吸收开关中的横向结构

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Absorptive switching and transverse structures in resonatorless optical bistability in bulk ZnSe is observed upon exciting the sample at the Urbach edge. The switching is due to nonlinear absorption induced by a temperature tuning of the band gap. We have modeled such behavior by numerically solving for the intensity, carrier density, and temperature, including both longitudinal and transverse fluctuations. Simulations show that both longitudinal and transverse heat diffusion are necessary in producing specific structures, as well as in determining the time of switching. During switching, the experiment and theory illustrate for the intensity profile the formation of a local minima on axis (hole) followed by a local maxima on axis and local minima off axis (rings). Such beam distortions and bistable switching are the result of the spatial and temporal dynamics and positive feedback existing among the absorption and heating.
机译:在Urbach边缘激发样品时,观察到体ZnSe中无谐振器光学双稳态的吸收开关和横向结构。开关是由于带隙的温度调谐引起的非线性吸收。我们通过数值求解强度、载流子密度和温度(包括纵向和横向波动)来模拟这种行为。仿真表明,纵向和横向热扩散对于产生特定结构以及确定开关时间都是必要的。在切换过程中,实验和理论说明了强度分布在轴上形成局部最小值(孔),然后是轴上的局部最大值和轴外局部最小值(环)。这种光束畸变和双稳态切换是吸收和加热之间存在的时空动力学和正反馈的结果。

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