Redistribution of dopants in ionhyphen;implanted silicon by pulsedhyphen;laser annealing

摘要

The redistribution of B, P, As, and Sb implanted into singlehyphen;crystal silicon and subsequently laser annealed with aQhyphen;switched ruby laser has been studied by secondaryhyphen;ion mass spectrometry and ion backscattering. Substantial alteration of the ashyphen;implanted profiles occurs, which is pulsehyphen;energyhyphen;density dependent. The altered profiles are in good agreement with theoretical calculations to be presented in a subsequent paper which show that redistribution occurs as a result of diffusion in the molten state.