Size effects in MoSi2hyphen;gate MOSFETrsquo;s

摘要

Refractory metal silicide gatenhyphen;channel MOSFETrsquo;s have been fabricated by rf sputtering from a hothyphen;pressed MoSi2alloy target. The annealed MoSi2sheet resistance was 2 OHgr;/laplac;. The MOSFETrsquo;s were fabricated using plasma etching, projection alignment, and a fully ionhyphen;implanted process. Typical values for a 1.7times;1.7hyphen;mgr;m2linear MOSFET are a threshold voltage of 1ndash;1.5 V and a transconductance of 50ndash;100 mgr;mho. Shorthyphen;channel (length and width) and substrate effects on the threshold voltage are demonstrated.