Origin of high‐frequency disperision ofGp/ohgr; of metal‐oxide semiconductor capacitors

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机译：金属连字符氧化物半导体电容器Gp/ohgr;高频分散的起源

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摘要

The high‐frequency maximum ofGp/ohgr; vs ohgr; curves is shown to result from bulk series resistance contrary to conclusions of Moritaetal.

机译：Gp/&ohgr; 与 &ohgr; 曲线的高&连字符频率最大值被证明是由体级联电阻引起的，这与 Moritaetal 的结论相反。

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