Rapid thermal annealing of InP using GaAs and InP proximity caps

摘要

Rapid thermal annealing of InP in an inert atmosphere is demonstrated using face‐to‐face GaAs and InP proximity caps to protect the active surface from decomposition. No surface damage of any kind is detected by optical microscopy, photoluminescence spectroscopy, or Raman scattering on samples annealed for 4 s at temperatures up to 850 °C. As application, the rapid thermal annealing of Si‐implanted InP samples is carried out. Full activation of the implanted species is obtained at annealing temperatures of 850 °C. Rapid thermal annealing of InP using a GaAs proximity cap promises to be a practical technology for the fabrication of semiconductor devices based on InP.