We report two new effects of negative differential resistance in the modulationhyphen;doped AlGaAs/GaAs negative resistance fieldhyphen;effect transistor. Both effects are well controlled by a third electrode. Presence of a topn+AlGaAs layer causes a hothyphen;electron realhyphen;space transfer to this layer, and prevents the electron transfer to the collector. Creation of the highhyphen;field domain in the sourcehyphen;drain channel is needed to activate the hothyphen;electron injection to the collector. The realhyphen;space transfer to the topn+AlGaAs layer, combined with the quenching of the highhyphen;field domain by the collector bias, are responsible for the appearance of the observed new negative differential resistance effects.
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