Steadyhyphen;state photocarrier grating technique for diffusionhyphen;length measurement in semiconductors: Theory and experimental results for amorphous silicon and semihyphen;insulating GaAs

摘要

The theory underlying the steadyhyphen;state photocarrier grating technique is presented, including the effect of surface recombination. Experimental results for amorphous hydrogenated silicon and semihyphen;insulating GaAs prove that diffusion lengths ranging from 200 Aring; to 10 mgr;m can be measured with an accuracy of better than 5percnt;.