Activation field, fatigue, and waitinghyphen;time effects in KNO3thinhyphen;film memories

摘要

By analyzing current transient datai(t) from KNO3thinhyphen;film memories in terms of the Ishibashindash;Takagi parametrization of the Avrami theory, we have been able to extract detailed information concerning the presence of an activation field (and the absence of a threshold), the relationship between characteristic switching time and spontaneous polarization when both are decreased either by increasing temperature or by repetitive readhyphen;write cycles (fatigue), and the behavior of switching kinetics as a function of the delay after application of a dc bias field (lsquo;lsquo;waitinghyphen;timersquo;rsquo;).