The effect of an applied electric field on the laserhyphen;induced damage of silicon

摘要

The damage produced by irradiating silicon single crystals with a freehyphen;running ruby laser is found to be influenced by an applied electric fieldE. For an average irradiation flux slightly higher than the damage threshold, and a carrier lifetime of 2 ms, surface cracking disappears whenEis increased from 0 to about 20 V/cm. Larger values ofElead to a decrease of the surface corrugation. These results may be accounted for by the recombination volume increase caused by an applied electric field.