Bipolar resistive switching in heterostructures: Bismuth oxide/normal metal

摘要

Thin filmed heterojunctions Ag/Bi/BiOx/Ag were fabricated and the effect of frequency of applied ac voltage on bipolar resistive switching in the obtained heterojunctions was observed for the first time. It has been found that the frequency dependence of the effect has a universal character for some oxide compounds. This observation confirms the significant role of oxygen-ion migration in the resistive switching phenomena in structures based on oxide compounds.