Evidence for Cuhyphen;related deep states in GaAs, earlier ascribed to Ni

摘要

Published data for the energy positions of Nihyphen;related levels in the band gap of GaAs exhibit serious discrepancies. We have studied the properties of Nihyphen;doped GaAs, the Ni being introduced by diffusion or liquid phase epitaxy. These techniques have been used successfully earlier to dope GaAs with Cu or Fe. When Ni is introduced during LPE, no related level is detected. When diffused, the only deep level found has properties identical to those of Cu in GaAs. It is therefore suggested that the level atEv+0.4 eV in GaAs frequently reported as Nihyphen;related is not due to Ni but to Cu.