A thyristor model of switching in metal‐thin insulator‐semiconductor‐semiconductor devices: The influence of insulating layer and illumination

摘要

The influence of the insulating layer and illumination on the threshold switching voltage (Vs) of metal‐thin insulator‐semiconductor‐semiconductor (MISS) devices has been modeled using the phenomenological approach we developed previously. J. Appl. Phys.65, 2102 (1989). The influence of the thin insulating layer onVshas been examined by investigating the influence of the effective barrier heights of the insulating layer on the current amplification factor of the metal‐thin insulator‐semiconductor part of the model. The influence of illumination is modeled in a similar way to the effect of base current injection in three‐terminal devices; the base current is replaced by the photocurrent generated as a result of illumination. Our model provides good agreement for MISS devices with silicon oxide insulating layers and illumination of fixed wavelength.