Electron beam induced dissociation and conductivity of SnO2films

摘要

The effect of electron bombardment on rfhyphen;sputtered SnO2films was studied using mass spectrometry, Auger electron spectroscopy, and conductivity measurements. The studies show that the electron beam causes surface dissociation and subsequent desorption of atomic oxygen. The dissociation is accompanied by corresponding increase of film conductivity, which persists in ultrahigh vacuum conditions and can eliminated by O2introduction. A model of the correlated processes is suggested.