Half-cladding semiconductor light source for control of optical-wave

摘要

A control technique of optical-wave conditions is one of the important issues for developing novel photonic devices. Difficult fabrication techniques with a high-aspect ratio are required to achieve a controlling the optical-wave conditions in the conventional photonic devices, since the conventional photonic devices are constructed with thick-cladding layers for a confinement of the optical waves. Therefore, we propose a half-cladding semiconductor light source as a novel photonic device structure. By using the half-cladding semiconductor structure, it is expected that the optical-wave conditions in the device can be effectively controlled with surface micro structures. In this paper, we report here the fabrication techniques and device characteristics of the half-cladding semiconductor light source.