Quality improvement of low-pressure chemical-vapor-deposited oxide by N↓(2)O nitridation

摘要

Quality of low-pressure chemical-vapor-deposited (LPCVD) oxide and N↓(2)O-nitrided LPCVD (LN2ON) oxide is investigated under high-field stress conditions as compared to thermal oxide. It is found that LPCVD oxide has lower midgap interface-state density D↓(it-m) and smaller stress-induced D↓(it-m) increase than thermal oxide, but exhibits enhanced electron trapping rate and degraded charge-to-breakdown characteristics, which, however, are significantly suppressed in LN2ON oxide, suggesting effective elimination of hydrogen-related species. Moreover. LN2ON oxide shows further improved Si/SiO↓(2) interface due to interracial nitrogen incorporation. # 1997 American Institute of Physics. S0003-6951 (97)02808-8