Deep levels induced by highhyphen;energy boron ion implantation intophyphen;silicon

摘要

Defects induced by B+implantation at 0.7 MeV inton+pdiodes were investigated using leakage current and deep level transient spectroscopy (DLTS). Leakage current increases drastically by implantation to a dose of more than 3times;1013cmminus;2. DLTS spectra reveal two hole trap levels in the shallower region than the projected range of B+. One level at 265 K (Ev+0.65 eV) is associated with point defects around dislocation kinks formed by B+implantation to doses of more than 3times;1013cmminus;2. Another level at 290 K (Ev+0.67 eV) is mainly responsible for the excess leakage current. This level was, for the first time, found inphyphen;Si after highhyphen;energy ion implantation followed by annealing.