High frequency noise and the diffusion coefficient of an AlGaAs/GaAs heterostructure device with a square potential well

摘要

Measurements of the diffusion coefficient in a square well heterostructure device are reported here. We present diffusion coefficient data as a function of frequency (0.5–12.0 GHz) and as a function of the electric field strength (F<3 kV/cm). Possible explanations of the observed trends, in terms of charge transfer mechanisms are tendered.