Growth and continuous compositional grading of GaAs1minus;xminus;zSbxPzby liquid phase epitaxy

摘要

The liquid phase epitaxial growth of GaAs1minus;xminus;zSbxPzmixed crystals is described. Layers have been continuously graded from a composition with the lattice constant of GaAs to a composition suitable for subsequent growth of a GaAs1minus;xSbxdoublehyphen;heterostructure laser. The details of the grading are discussed in terms of a phasehyphen;diagram calculation.