Flicker noise in metalhyphen;oxidehyphen;semiconductor transistors from liquid helium to room temperature

摘要

A study of the normalized drain current spectral densitySId/I2das a function of drain current has been carried out onnchannel metalhyphen;oxidehyphen;semiconductor transistors at very low (4 K), low (77 K), and room temperatures. It is demonstrated experimentally that the drain current dependence ofSId/I2dis strongly correlated to that of the transconductancehyphen;current ratio squared (gm/Id)2. This result clearly shows that the carrierhyphen;number fluctuation model is applicable not only at room temperature but also at low and very low temperatures. Therefore, it is proved that the mobility fluctuation model is inadequate for the interpretation of our flicker noise data.