Assessment of GaN metal-semiconductor-metal photodiodes for high-energy ultraviolet photodetection

摘要

We report on the fabrication and characterization of low dark-current GaN metal-semiconductor-metal (MSM) photodiodes. Their quantum efficiency in the vacuum-ultraviolet range has been analyzed, demonstrating that these devices are an excellent choice for high-energy photodetection. Models to explain and control the performance as a function of residual doping and geometry are applied to GaN-based MSM photodiodes.