Aninsituobservation of the growth kinetics and stress relaxation Pd2Si thin films on Si(111)

摘要

The growth of the Pd2Si thin fllms on Si(111) substrates has been monitored by aninsituxhyphen;ray diffraction technique in vacuum and in helium atmosphere from 160 to 250thinsp;deg;C. A familiar parabolic growth rate was found, confirming the diffusionhyphen;controlled film growth process. The activation energies were found to be 1.34 and 1.37 eV for the measurements performed in vacuum and helium environment, respectively. Stress relaxation in the growing Pd2Si fllm was observed when the reaction temperature exceeds 200thinsp;deg;C. The relaxed films showed a higher degree of texture as evidenced by the rocking curve measurements.