Substrate temperature related degradation mechanisms in molecular beam epitaxial InP

摘要

The deleterious effects of structural changes on the quality of (001) oriented InP grown by MBE at low substrate temperatures has been investigated. For deposition belowTs=300thinsp;deg;C, concomitant with the loss of reconstruction in the reflection high energy electron diffraction (RHEED) pattern, the electrical properties of the epilayers begin to degrade, culminating in their total collapse atTs=145thinsp;deg;C, associated with the onset of twinned growth.