Photoelectromagnetic effect in CuInSe2

摘要

The photoelectromagnetic effect is studied in single crystals of CuInSe2. A region of light excitation is found in which the dependence ofiPEMon light intensity is linear. From the experimental data, a lifetime of the minority carriers tgr;n=0.6times;10minus;9sec and a surface recombination velocitys=3times;105cm/sec are determined.