An 8 CuInSe2 (CIS) based solar cell was developed using an electrodeposited CIS precursor film subjected to post-deposition heat treatment at 550 degrees C in Se and In atmospheres. The cell structure consisted of Mo/CIS/CdS/i-ZnO/ZnO/MgF2/Al-Ni. The cell parameters such as J(sc) = 32.1 mA cm(-2) V-oc = 394 mV, FF = 62.3 and eta = 7.9 were determined from I-V characterization of the annealed cell at a light intensity of 1000 W m(-2). The cell parameters improved after annealing in air at 200 degrees C. A carrier density of 6.3 x 10(17) cm(-3) was obtained from the C-V characterization of the cell. References: 10
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