Electronhyphen;paramagnetichyphen;resonance study of heathyphen;treatment centers innhyphen;type silicon

摘要

Donor formation in heathyphen;treated phosphorushyphen;doped Czochralskihyphen;grown silicon has been studied by electron paramagnetic resonance and resistivity measurements. Both lsquo;lsquo;thermalhyphen;donorhyphen;rsquo;rsquo; and lsquo;lsquo;newhyphen;donorrsquo;rsquo;hyphen;formation temperature regions (470 and 650thinsp;deg;C, respectively) have been investigated. The results allow one to identify the spectra in both regions as arising from the Sihyphen;NL10 defect.