Strain‐induced current leakage in InSb photovoltaic detectors

摘要

Gate‐controlled diode devices have been used to study the influence of external strain on the current leakage of InSbp+/nphotovoltaic infrared detectors. Equivalence between external strain and the gate electrode in their effect on the current‐voltage (I‐V) characteristic has been empirically confirmed. By introducing an explicit analytical relationship between the applied gate voltage and the induced charge‐carrier density near thep+/njunction and using the technique of simultaneous measurement of theI‐Vcharacteristic under a gate voltage and suitable strain at LN2temperature, the local induced surface and bulk charge‐carrier densities equivalent to a given strain are obtained. A discussion of the location of the current leakage induced by the gate voltage or by strain in the piezoelectric‐semiconductor device is given.