Photovoltaic effect in Cu/CuGaSe2Schottky barriers

摘要

Cu/CuGaSe2Schottky barriers have been prepared by vacuum deposition of copper onphyphen;type CuGaSe2single crystals with a resistivity of 10minus;2OHgr;thinsp;cm. The photovoltaic properties of such cells have been investigated. Under the AM1 condition these cells exhibit a solarhyphen;energy conversion efficiency of 3.5percnt;.