Influence of light on individual defect noise inahyphen;Si:H/ahyphen;SiNx:H double barrier structures

摘要

A report on the influence of light on random telegraphic noise (RTN) in the current throughahyphen;Si:H/ahyphen;SiNx:H double barrier structures is given. Upon illumination with a focused Hehyphen;Ne laser the spectral power density of the noise as well as the individual switching times are affected. Different regimes are observed: For sufficiently low light intensity the emission time constant tgr;macr;eof the trap responsible for RTN decreases for increasing light intensity, whereas the capture time constant tgr;macr;cremains nearly unaffected. For medium intensity illumination RTN disappears during illumination but recovers after its termination. Under high intensity illumination RTN vanishes and as a result the spectral power density of theunilluminatedsample changes from a Lorentzian (typical for RTN) to a 1/fhyphen;like behavior. This unilluminated nonhyphen;RTN state ismetastable, i.e., the RTN state can be recovered by moderate thermal annealing. thinsp;