On the hot‐carrier effects in 1.3 mgr;m InGaAsP diodes

摘要

Hot‐carrier effects induced by injected carriers are reported for In1−xGaxAsyP1−y1.3 mgr;m laser diodes. These effects are manifested by changes of electroluminescent spectra produced by the variation of injected current and heat‐sink temperature. By analyzing the positions of the peaks of envelope spectral curves and of the individual Fabry–Perot peaks we come to the conclusion that carrier heating and not that of the lattice is responsible for the observed effects.