Quantization effect on capacitancehyphen;voltage and currenthyphen;voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode

摘要

Capacitancehyphen;voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a selfhyphen;consistent Schrouml;dingerndash;Poisson solver were found in agreement with the experimental results under the forwardhyphen;bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the currenthyphen;voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.