Admittance spectroscopy of deep levels in Hg1−xCdxTe

摘要

We report the application of diode admittance spectroscopy in characterizing traps in Hg1−xCdxTe. Measurements performed onn+‐pjunction photodiodes have identified a hole trap located 0.16 eV above the valence band inx=0.305 liquid‐phase‐epitaxy‐grown material and a single hole trap located 0.046 eV above the valence band inx=0.219 bulk‐grown material. Measurements of trap density and majority‐carrier capture cross section have also been carried out, with results suggesting hole capture at a neutral trapping center. Trap energies determined by the admittance spectroscopy technique were found to be in good agreement with lifetime‐versus‐temperature data analyzed in terms of a single Shockley‐Read recombination center.