The influence of ammonia on rapidhyphen;thermal lowhyphen;pressure metalorganic chemical vapor deposited TiNxfilms from tetrakis (dimethylamido) titanium precursor onto InP

摘要

The process kinetics, chemical composition, morphology, microstructures, and stress of rapidhyphen;thermal low pressure metalorganic chemical vapor deposited (RThyphen;LPMOCVD) TiNxfilms on InP, using a combined reactive chemistry of ammonia (NH3) gas and tetrakis (dimethylamido) titanium (DMATi) liquid precursors, were studied. Enhanced deposition rates of 1ndash;3 nmthinsp;sminus;1at total chamber pressures in the range of 3ndash;10 Torr and temperatures of 300thinsp;deg;Cndash;350thinsp;deg;C at a NH3:DMATi flow rate ratio of 1:8 to 1:15 were achieved. Stoichiometric film compositions were obtained, with carbon and oxygen impurity concentrations as low as 5percnt;. Transmission electron microscopy analysis identified the deposited films as TiN with some epitaxial relationship to the underlying (001) InP substrate. This process provides a superior film to the preview RThyphen;LPMOCVD TiNxfilm deposited using only the DMATi precursor.