Midhyphen;infrared dispersion of the refractive index and reflectivity for GaAs

摘要

Since the band gap of GaAs is more than 40 times larger thanhngr;TOof the Reststrahlen absorption peak, it would seem natural to assume that dispersion caused by one phenomenon ceases completely before that caused by the other begins. However, that is not rigorously true, and the continuous progression of the refractive indexn(hngr;) is modeled here for situations of room temperature (sim;300 K) and low temperatures (30 K). Attention is paid especially to the consequences for the spectral variation of GaAs reflectivity through the midhyphen;infrared at such temperatures, and the implications for making quantitative deductions about the strengths of weak subhyphen;bandhyphen;gap absorption processes in this material.