Some analyses of potential profiles of forwardhyphen;biased highhyphen;low junctions

摘要

A model calculation for the variation of the normalized potential against the normalized position for a forwardhyphen;biased, below 2 thermal voltage, highhyphen;low junction has been made through numerical computations of Poissonrsquo;s equation. The model is oriented to a junction with a sufficiently large doping difference between the two sides.