Direct Wndash;Ti contacts to silicon

摘要

We have studied the contact resistance in a metallization system that employs a direct contact between a tungstenndash;titanium alloy and shallow junctions in silicon. The values obtained in the present study are all within acceptable limits (100 OHgr; mgr;m2) for very large scale integration applications. The metalndash;silicon system has been subjected to moderate heat treatments, similar to those required in processing twohyphen;level metallization schemes. No detrimental effects on the electrical properties of these contacts have been observed.